Accession Number:

ADA089215

Title:

Luminescent Properties of Semiconductor Photoelectrodes.

Descriptive Note:

Technical rept.,

Corporate Author:

WISCONSIN UNIV-MADISON DEPT OF CHEMISTRY

Personal Author(s):

Report Date:

1980-08-12

Pagination or Media Count:

51.0

Abstract:

The use of luminescent, n-type 5-1000-ppm CdSTe and 10 ppm-CdSAg polycrystalline photoelectrodes as probes of recombination in photo-electrochemical cells is reported. Except for intensity, the emission spectra lambda sub max, 600-700 nm are insensitive to the presence of S2-Sn2- electrolyte and to the excitation wavelengths and electrode potentials employed. With ultraband gap irradiation lambda less than or 500 nm and aqueous S2-Sn2- or Te2-Te22- electrolytes, optical energy is converted to electricity at 0.1-5 efficiency and to luminescence at 0.01-1.0 efficiency the effects of surface preparation and grain boundaries in determining efficiency and discussed. Increasingly negative bias applied to CdSTe and CdSAg photoanodes increases emission intensity by 15-100 while the photocurrent simultaneously declines to zero. Band gap edge 514.5-nm excitation yields smaller photocurrents and larger but much less potential dependent emission intensity. These results are consistent with the band bending model presently used to described photoelectrochemical phenomena. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE