Accession Number:
ADA089026
Title:
Ion Implantation of Wide Bandgap Semiconductors.
Descriptive Note:
Final rept. 15 Dec 78-14 Dec 79,
Corporate Author:
HUGHES RESEARCH LABS MALIBU CA
Personal Author(s):
Report Date:
1980-05-01
Pagination or Media Count:
50.0
Abstract:
The primary objectives of this program are to study the electrical properties and carrier distributions in ion-implanted and annealed GaAs and to demonstrate the feasibility of forming planar, isolated p-n junctions by sequential implantation of donors and acceptors into semi-insulating GaAs. To fabricate such planar junctions, a selective area implantation process technology was developed. The required device isolation was achieved by exploiting the semi-insulating nature of Cr-doped GaAs.
Descriptors:
- *MASS SPECTROSCOPY
- *SEMICONDUCTORS
- *ION IMPLANTATION
- *BAND THEORY OF SOLIDS
- DIODES
- ANNEALING
- PROCESSING
- GALLIUM ARSENIDES
- THEORY
- VOLTAGE
- CHARGE CARRIERS
- ETCHING
- ELECTRICAL PROPERTIES
- IMPURITIES
- OXYGEN
- DEPOSITION
- PROFILES
- N TYPE SEMICONDUCTORS
- WAFERS
- ELECTRON ACCEPTORS
- BREAKDOWN(ELECTRONIC THRESHOLD)
- P TYPE SEMICONDUCTORS
- SILICON NITRIDES
- GERMANIUM COMPOUNDS
Subject Categories:
- Atomic and Molecular Physics and Spectroscopy
- Solid State Physics