Accession Number:

ADA089026

Title:

Ion Implantation of Wide Bandgap Semiconductors.

Descriptive Note:

Final rept. 15 Dec 78-14 Dec 79,

Corporate Author:

HUGHES RESEARCH LABS MALIBU CA

Report Date:

1980-05-01

Pagination or Media Count:

50.0

Abstract:

The primary objectives of this program are to study the electrical properties and carrier distributions in ion-implanted and annealed GaAs and to demonstrate the feasibility of forming planar, isolated p-n junctions by sequential implantation of donors and acceptors into semi-insulating GaAs. To fabricate such planar junctions, a selective area implantation process technology was developed. The required device isolation was achieved by exploiting the semi-insulating nature of Cr-doped GaAs.

Subject Categories:

  • Atomic and Molecular Physics and Spectroscopy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE