Research on Low Temperature, Directed Energy Processing of Very Large Scale Integrated Structures.
Semiannual technical rept. 1 Jan-30 Jun 80,
SPIRE CORP BEDFORD MA
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This is the third semiannual report of a program to demonstrate that low temperature processing techniques, particularly pulsed electron beam surface heating, can eliminate the need for high temperature thermal cycling of silicon wafers in fabricating very large scale integrated VLSI devices. This report describes results using pulsed annealing techniques to fabricate 1 low leakage diodes, 2 ion-implanted resistors defined by thin 2.5 micron oxide windows, and 3 small geometry patterns to measure lateral diffusion of dopants. Comparison to high temperature thermal processing was favorable. Author
- Electrical and Electronic Equipment
- Solid State Physics