Effect of Various Dielectrics on the Design of Millimeter-Wave Line Scanning Antennas.
Research and development technical rept.,
ARMY ELECTRONICS RESEARCH AND DEVELOPMENT COMMAND FORT MONMOUTH NJ ELECTRONICS TECHNOLOGY/DEVICES LAB
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The effect of using various materials having different relative dielectric constants on the theoretical design of millimeter-wave line scanning antennas has been examined. Three typical dielectrics were chosen for comparative purposes silicon epsilonr 12, sapphire epsilonr 9.4, and boron nitride Epsilonr 4. Theoretical calculations were made for each material over the frequency range of 60 to 220 GHz, with special emphasis at 94 GHz due to its increasing use in new millimeter-wave systems. Comparisons were made among the dielectric materials in regard to their maximum allowable physical size for single Ey 11 mode operation. Using each of the three dielectrics with periodic surface perturbations as a line scanning antenna, the effects on the angle of radiating energy due to changes in the waveguide size and perturbation spacing were determined and evaluated.
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