High Resistivity Molecular Beam Epitaxial AlGaAs for Device Applications.
Annual rept. 1 May 78-30 Apr 79,
ROCKWELL INTERNATIONAL THOUSAND OAKS CA ELECTRONICS RESEARCH CENTER
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AlGaAs GaAs molecular beam epitaxial MBE layers suitable for device application, are studied and the results are discussed. Analysis includes Van der Pauw and Hall measurements, photoluminescence, sheet resistance, photoinduced current transient spectroscopy PITS, secondary ion spectroscopy, and capacitance-voltage profiling. All indications are that high quality buffer layers of AlGaAs and active layers of GaAs can be produced by MBE which can yield devices of exceptional performance. Author
- Electrical and Electronic Equipment
- Atomic and Molecular Physics and Spectroscopy