Accession Number:

ADA083682

Title:

Noncoplanar High Power FET.

Descriptive Note:

Final rept. Dec 74-Nov 78,

Corporate Author:

VARIAN ASSOCIATES INC PALO ALTO CA SOLID STATE LAB

Report Date:

1979-12-01

Pagination or Media Count:

138.0

Abstract:

Using a p substrate as the gate and employing low-doped V-grooves under the source and drain to reduce parasitic capacitances, a noncoplanar power FET was designed and fabricated which achieved submicron gate lengths with photolithography masks employing a resolution limit of several microns. Device performance was limited by low values of pinch-off voltage and gate breakdown voltage. Ion imlantation or diffusion should enable the breakdown voltage to be raised by virtue of separating the p-n junction from the growth interface.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE