Incoherent Detection of Ultrasonic Using Thin Film Amorphous Semiconductors.
Final rept. 1 Apr 76-1 Jun 79,
MICHIGAN UNIV ANN ARBOR DEPT OF CHEMISTRY
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Thin film ultrasonic detectors have been fabricated from amorphous germanium. The detectors are insensitive to phase and function as sensitive power detectors for ultrasonic waves. Due to the mode of operation of the detectors, their usefulness is limited to the temperature range 1.5-77 degrees K. The dependence of the sensitivity of the devices upon the structural and electrical characteristics of the a-Ge material has been investigated experimentally. It was found that useful performance is obtained only when electrical conduction is by a variable range hopping mechanism. Author
- Solid State Physics