Gallium Arsenide Advanced Crystal Growth and Beam Processing.
Final progress rept. 1 May 1978-30 Jul 1979
HUGHES RESEARCH LABS MALIBU CA
Pagination or Media Count:
This report describes the progress made during a fifteen-month program to study the feasibility of growth of high-purity epitaxial quality bulk GaAs crystals from solution and annealing of implanted layers and Ohmic contacts for device applications using laser and electron beams. Millimeter-thick crystals have been grown by the low-temperature solution-growth process. Room- temperature n-type carrier concentrations of 2 times 10 to the 15th powercu.cm. and liquid nitrogen mobilities of 30,000 sq. cmVsec have been achieved. Theoretical studies of a variety of potential growth configurations were performed. A detailed study of the laser of annealing implanted layers and Ohmic contacts was performed using several Q-switched and cw lasers. State-of-the-art results were achieved in both the implant-annealing and Ohmic-contact areas. Preliminary investigations of the annealing of implanted layers and Ohmic contacts using pulsed electron beams were also performed.
- Solid State Physics