Monolithic Integration of Microwave GaAs Power FETs.
Annual technical rept. 1 Oct 78-30 Sep 79,
TEXAS INSTRUMENTS INC DALLAS CENTRAL RESEARCH LABS
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Efforts during the second year of this contract have included ivestigations of monolithic integration of GaAs power field effect transistors FETs at X-band microwave frequencies and incorporation of on-chip matching using lumped elements and coplanar ground metallization for monolithic FET circuit design. Two monolithic circuits have been investigated - a push-pull two-stage amplifier on a 2.0 x 2.0 mm chip, and a three-transistor paraphase amplifier on a 2.0 x 2.4 mm chip. Results for the two-stage push-pull amplifier include 1.4 W with 12.4 dB gain at 9.0 GHz. To provide the necessary 180 deg. out-of-phase signals for the push-pull devices, 180 deg. hybrid rings fabricated on alumina substrates are used. Fabrication of the paraphase amplifier, which is intended to replace the input 180 deg. hybrid ring, and preliminary evaluation of these chips have also been done. Author
- Electrical and Electronic Equipment