Accession Number:

ADA080583

Title:

Indium Phosphide for High Frequency Power Transistors.

Descriptive Note:

Interim rept. 21 Mar 78-21 Mar 79,

Corporate Author:

WESTINGHOUSE RESEARCH AND DEVELOPMENT CENTER PITTSBURGH PA

Report Date:

1979-09-28

Pagination or Media Count:

90.0

Abstract:

Technology development is presented for the development of an InP power Field Effect Transistor. Both ion implantation and vapor phase epitaxy results are presented as a means for providing an active channel. Processing technology etching, ohmic contacts is reviewed as well as a description of various approaches for gating n-type InP. Conclusions and plans for the last phase of the program are discussed. As a result of the first part of the program, work is to be concentrated on developing Junction Field Effect Transistor technology.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE