Indium Phosphide for High Frequency Power Transistors.
Interim rept. 21 Mar 78-21 Mar 79,
WESTINGHOUSE RESEARCH AND DEVELOPMENT CENTER PITTSBURGH PA
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Technology development is presented for the development of an InP power Field Effect Transistor. Both ion implantation and vapor phase epitaxy results are presented as a means for providing an active channel. Processing technology etching, ohmic contacts is reviewed as well as a description of various approaches for gating n-type InP. Conclusions and plans for the last phase of the program are discussed. As a result of the first part of the program, work is to be concentrated on developing Junction Field Effect Transistor technology.
- Electrical and Electronic Equipment
- Solid State Physics