The Effect of Dopant Transport Rate on Crystalline Damage in Silicon.
Final rept. 3 May 76-31 Aug 79,
PENNSYLVANIA STATE UNIV UNIVERSITY PARK DEPT OF ELECTRICAL ENGINEERING
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Studies are described of the volatilization of hydrogen B2O3 species in control water vapor ambients and the reaction with silicon to form boron silicide which are used to control defects in the silicon. Author
- Solid State Physics