Accession Number:

ADA080569

Title:

The Effect of Dopant Transport Rate on Crystalline Damage in Silicon.

Descriptive Note:

Final rept. 3 May 76-31 Aug 79,

Corporate Author:

PENNSYLVANIA STATE UNIV UNIVERSITY PARK DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1980-01-17

Pagination or Media Count:

7.0

Abstract:

Studies are described of the volatilization of hydrogen B2O3 species in control water vapor ambients and the reaction with silicon to form boron silicide which are used to control defects in the silicon. Author

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE