Reliability Characterization of LSI Memories.
Final technical rept. Dec 77-May 79,
MCDONNELL DOUGLAS ASTRONAUTICS CO-ST LOUIS MO
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The primary objective of this effort was to evaluate and characterize the reliability and failure modes of 4K Large Scale Integration LSI memories procured to the specification requirements of MIL-M-38510237. Secondary objectives were to evaluate the screening effectiveness of the detail specifications and to compare the relative effectiveness of high temperature accelerated life tests performed with both static and dynamic excitation. The program objectives were achieved by subjecting the test devices to a matrix of temperature cycling tests, high temperature non-operating life tests, and high temperature operating life tests with static and dynamic excitation. The part types under evaluation include a 1K x 4 bit NMOS static RAM AM9130 and a 4K x 1 bit NMOS static RAM AM9140. The test results indicated that the AM9130 and AM9140 devices have a high reliability potential. However, there was an insufficient number of life test failures to estimate the device failure rates based on the Arrhenius Reaction Rate Model. A total of eighteen devices of 240 total tested were failed at the completion of testing and all but two failures were attributed to a surface related mechanisms. Seven of the eighteen device failures were due to marginal ICC values at the start of life testing and a single failure was attributed to a degraded input caused by static discharge or an electrical transient.
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