Accession Number:

ADA080247

Title:

Preparation and Photoelectronic Properties of FeNbO4.

Descriptive Note:

Technical rept.,

Corporate Author:

BROWN UNIV PROVIDENCE RI DEPT OF CHEMISTRY

Report Date:

1980-01-17

Pagination or Media Count:

24.0

Abstract:

The orthorhombic alpha-PbO2 phase of FeNbo4 was prepared and its photo-electronic properties measured Sintered disks were shown to be n-type and gave a conductivity of 40 ohm-cm. Measurements of the photoresponse gave a flat-band potential between 0.1 and 0.4 V vs SCE at a pH of 8.5 and an optical band gap of 2.082 eV. Several higher-energy band gaps at 2.682, 2.942, 3.242 and 4.382 eV were also determined. There appears to be an enhancement of the quantum efficiency due to the presence of Fe06 active centers while retaining the fundamental characteristics of the NbO6 octahedra. Author

Subject Categories:

  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE