The Implantation of Impurity Ions and Proton Bombardment in Indium Phosphide.
Final rept. 1 Jan 75-31 Mar 79,
WESTINGHOUSE RESEARCH AND DEVELOPMENT CENTER PITTSBURGH PA
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Ion Implantation of InP has been studied from qualification of substrates through characterization of the electrical transport properties of the resulting layers. InPFe is found to have sufficient resistivity for typical device applications in contrast to InPCr. Residual damage from grit polishing compromised mobility and activation efficiency a bromine-methanol etch polish yields superior surfaces and reduced residual damage. This etch-polish reveals either FeP precipitates or In inclusions in available InPFe wafers. In contrast to GaAsCr, InPFe has never exhibited anomalous compensation or conversion phenomena. Qualification consists of eliminating ingots with excessive precipitate or inclusion counts consistent activation and mobility data are achieved using only this qualification. Acceptable activation and mobility can be achieved via 700 C annealing. Phosphosilicate glass deposited by the CVD technique provides effective encapsulation to this temperature. Undoped SiO2 fails due to stress and phosphorous absorption problems. Plasma deposited Si3N4 is effective to more than 750 C but it results in a shallow n conversion layer presumably due to indiffusion of excess Si from the Si3N4.
- Electrical and Electronic Equipment
- Solid State Physics