Accession Number:

ADA076304

Title:

Study of the Electronic Surface State of III-V Compounds

Descriptive Note:

Final technical rept.

Corporate Author:

STANFORD UNIV CA STANFORD ELECTRONICS LABS

Personal Author(s):

• Spicer, W. E.

Report Date:

1978-10-15

Pagination or Media Count:

259.0

Abstract:

In the past few years, we have made intensive studies of the physics of compound semiconductor interfaces. This report contains the most important results obtained during the contact period and is divided roughly into three parts dealing with Schottky-barrier formation, oxygen chemisorption, and cesium and cesium oxide overlayers. Following the Overview, Chapter 2 presents a model for the surface structure of GaAs which in now accepted. The next chapter demonstrates that Schottky-barrier pinning is due not to intrinsic surface states but to metal induced extrinsic states. Chapter 4 describes synchrotron radiation studies of Au Schottky-barrier formaton on the IV-V semiconductors and presents a model of Schottky-barrier pinning based on defect formation induced by the Au overlayer.

Descriptors:

• *GALLIUM ARSENIDES
• *SCHOTTKY BARRIER DEVICES
• *SEMICONDUCTOR DEVICES
• ANTIMONY ALLOYS
• CESIUM COMPOUNDS
• COPPER COMPOUNDS
• GOLD
• INDIUM PHOSPHIDES
• INSULATION
• INTERFACES
• LAYERS
• MODELS
• NITROGEN
• OXYGEN
• PHOTOELECTRIC EMISSION
• PHOTOELECTRON SPECTRA
• RADIATION
• SORPTION
• STRUCTURES
• SURFACES
• THICKNESS
• VALENCE BANDS

Subject Categories:

• Radiation and Nuclear Chemistry
• Electrical and Electronic Equipment
• Properties of Metals and Alloys

Distribution Statement:

APPROVED FOR PUBLIC RELEASE