Electrical and Optical Properties of High Purity p-Type Single Crystals of GeFe204.
BROWN UNIV PROVIDENCE RI DEPT OF CHEMISTRY
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Single crystals of the spinel GeFe204, grown by the chemical vapor transport technique, are p-type semiconductors with an acceptor ionization energy of 0.39 eV. The material is a heavily compensated band-type semiconductor, with a typical hole concentration of 310 to the 14 power cm near room temperature, and a temperature independent Hall mobility of 2 sq cmVs. Optical absorption measurements show the optical band gap to be 2.3 eV the octahedral field splitting of the Fe2 d-levels is 10200 110200 cm. Magnetic measurements show that neff is 5.26, from which a trigonal field splitting of 1950 cm is derived. Author
- Inorganic Chemistry
- Electrical and Electronic Equipment
- Metallurgy and Metallography