Gallium Arsenide Vertical Channel Insulated Gate Field Effect Transistor.
Annual technical rept. (Final). Jan-Dec 77,
WESTINGHOUSE RESEARCH AND DEVELOPMENT CENTER PITTSBURGH PA
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The techniques for producing n-p-n structures in gallium arsenides are described. Evaluation of the surface state densities of anodic oxide on gallium arsenide show minima at about mid gap of 2 times 10 to the 11th power eV sq.cm. These densities are affected by annealing conditions and their measurement by sweep time. Recommendations for future work include the use of indium phosphide as the semiconductor. Author
- Electrical and Electronic Equipment
- Solid State Physics