Metal-Nitride-Oxide-Semiconductor (MNOS) Radiation Characterization Studies.
AIR FORCE WEAPONS LAB KIRTLAND AFB NM
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This report describes the Radiation Characterization studies performed at the Air Force Weapons Laboratory AFWL on Metal-Nitride-Oxide-Semiconductor MNOS transistors, arrays, and related PMOS devices during the period of March 1972 to September 1978. The work presented shows the radiation test data, testing, techniques, and radiation hardening ideas which assisted AFWL in the development of a radiation hard, monolithic, PMOSMNOS RAM array the Sperry Rand SR2256. Author
- Electrical and Electronic Equipment
- Computer Hardware
- Radioactivity, Radioactive Wastes and Fission Products