Annealing of Ion-Implanted Silicon by an Incoherent Light Pulse.
ARMY ELECTRONICS RESEARCH AND DEVELOPMENT COMMAND FORT MONMOUTH NJ ELECTRONICS TECHNOLOGY/DEVICES LAB
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Annealing of boron-implanted silicon by a single 15-microsecond pulse from a flash lamp has been observed. The required energy density was 27 joules per square centimeter incident on the silicon. Electrical activity of boron was comparable to that in thermally annealed samples. Author
- Solid State Physics