Accession Number:

ADA073495

Title:

Annealing of Ion-Implanted Silicon by an Incoherent Light Pulse.

Descriptive Note:

Technical rept.,

Corporate Author:

ARMY ELECTRONICS RESEARCH AND DEVELOPMENT COMMAND FORT MONMOUTH NJ ELECTRONICS TECHNOLOGY/DEVICES LAB

Report Date:

1979-07-01

Pagination or Media Count:

7.0

Abstract:

Annealing of boron-implanted silicon by a single 15-microsecond pulse from a flash lamp has been observed. The required energy density was 27 joules per square centimeter incident on the silicon. Electrical activity of boron was comparable to that in thermally annealed samples. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE