The Preparation and Characterization of InP and Related III-V Single Crystals and Epitaxial Layers Produced by Molten Salt Electrolysis.
Final rept. 1 Mar 77-30 Apr 79,
STANFORD UNIV CALIF CENTER FOR MATERIALS RESEARCH
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This report summarizes the results of a two-year investigation of the viability of electrodeposition as a means of preparing indium phosphide, ultimately for electronic device applications. InP proved to be a difficult material to prepare by this technique, mainly because of the restrictions imposed on the maximum temperature of deposition by decomposition of InP and volatilization of In2O3 solute. A major portion of the total effort was spent on finding an optimum solvent to meet the requirement that the maximum deposition temperature should not exceed 600 C, and the Na,KPO3,F quaternary eutectic was found to give best results. Reproducible InP deposits of fairly uniform thickness were made onto 0001 single crystal CdS substrates at potentials of -0.90 to 1.00V versus graphite with current densities of 1-3mAsq cm. In spite of these low current densities, deposits thicker than 1 micron were found to be polycrystalline. The purity of the deposits was not sufficiently high for device applications, but a marked improvement with length of deposition time was demonstrated. Deposits of InP on 111 InP substrates were also polycrystalline and of less uniform thickness.
- Solid State Physics