Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor Devices
Final technical rept. 16 May 1976-30 Jun 1978
IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY
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These papers discuss the effects of radiation, Heat treatment, Thickness, Measuring temperature, impurity content on the electron trapping characteristics of Si02. The results of a comprehensive study of the photo conductivity and photo transmission of Si02 are also included that make it possible to determine the band gap. The generation of donor states near the Si- Si02 interface is described with a discussion of two alternate mechanisms involving excitons or hydrogen diffusion.
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