Accession Number:

ADA073300

Title:

Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor Devices

Descriptive Note:

Final technical rept. 16 May 1976-30 Jun 1978

Corporate Author:

IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Report Date:

1979-04-01

Pagination or Media Count:

185.0

Abstract:

These papers discuss the effects of radiation, Heat treatment, Thickness, Measuring temperature, impurity content on the electron trapping characteristics of Si02. The results of a comprehensive study of the photo conductivity and photo transmission of Si02 are also included that make it possible to determine the band gap. The generation of donor states near the Si- Si02 interface is described with a discussion of two alternate mechanisms involving excitons or hydrogen diffusion.

Subject Categories:

  • Electrical and Electronic Equipment
  • Coatings, Colorants and Finishes
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE