Accession Number:

ADA073148

Title:

Electrical Overstress Program.

Descriptive Note:

Technical rept.,

Corporate Author:

ARMY MISSILE RESEARCH AND DEVELOPMENT COMMAND REDSTONE ARSENAL AL ADVANCED SYSTEMS DEV/MFG TECH DIRECTORATE

Personal Author(s):

• Mathews,D.
• Budenstein,P. P.

Report Date:

1978-09-01

Pagination or Media Count:

166.0

Abstract:

This report is a description of initial work on a program to provide information needed in the development of a nondestructive screen to eliminate junction bipolar devices especially suspectible to damage after second breakdown. Based on the results of the first 8 months of work, the decision has been made that the major thrust of the program should be towards identifying the reasons why specific samples of a given device type are unusually susceptible, rather than determining nominal susceptibility of generic types.

Descriptors:

• *NONDESTRUCTIVE TESTING
• *BREAKDOWN(ELECTRONIC THRESHOLD)
• *BIPOLAR TRANSISTORS
• TEST EQUIPMENT
• MONITORS
• BIAS
• OVERLOAD
• ELECTRICAL LOADS
• JUNCTION TRANSISTORS
• AVALANCHE EFFECT(ELECTRONICS)

Subject Categories:

• Electrical and Electronic Equipment
• Test Facilities, Equipment and Methods

Distribution Statement:

APPROVED FOR PUBLIC RELEASE