Accession Number:

ADA073052

Title:

Lifetime Control in Silicon through Focused Laser Beam Damage

Descriptive Note:

Final rept. 1 May 1978-30 Apr 1979

Corporate Author:

IBM CORP HOPEWELL JUNCTION NY EAST FISHKILL LABS

Personal Author(s):

Report Date:

1979-06-30

Pagination or Media Count:

93.0

Abstract:

Minority carrier lifetime and resistivity engineering in silicon through use of high power laser beams is described. Unique doping profiles are produced through 80 Kev As implantations followed by laser annealing. Minority carrier lifetime distributions on silicon surfaces are substantially improved through laser damage gettering. Laser operating conditions to obtain optimum lifetime and resistivity engineering effects are given.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE