Lifetime Control in Silicon through Focused Laser Beam Damage
Final rept. 1 May 1978-30 Apr 1979
IBM CORP HOPEWELL JUNCTION NY EAST FISHKILL LABS
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Minority carrier lifetime and resistivity engineering in silicon through use of high power laser beams is described. Unique doping profiles are produced through 80 Kev As implantations followed by laser annealing. Minority carrier lifetime distributions on silicon surfaces are substantially improved through laser damage gettering. Laser operating conditions to obtain optimum lifetime and resistivity engineering effects are given.
- Solid State Physics