Accession Number:

ADA073014

Title:

Study of the Electronic Surface States of III-V Compounds

Descriptive Note:

Semi-annual technical progress rept. 1 Oct 1978-31 Mar 1979

Corporate Author:

STANFORD UNIV CA STANFORD ELECTRONICS LABS

Personal Author(s):

Report Date:

1979-03-31

Pagination or Media Count:

57.0

Abstract:

Although several theories of Schottky-barrier formation have been proposed, none has emerged as the correct general theory which elucidates the mechanism responsible for the barrier formation. Indeed, there may be no such general theory and, at the present time, it seems more appropriate to study limited classes of semiconductor materials. We have chosen the 3-5 compounds for both theoretical and practical reasons. The cleavage faces of GaAS, GaSb, and InP have the advantage that there are no intrinsic states in the band gap. This is in contrast to the more familiar column 4 semiconductors which do have intrinsic surface states in band gap upon cleaving. It was this concept of intrinsic semiconductor surface states in the gap which was used by Bardeen to explain Schottky-barrier formation on Si. However, the presence of these intrinsic surface states in the gap on the clean cleaved Si 111 surface does not rule out the possibility that other mechanisms may be responsible for surface Fermi energy stabilization after deposition of an overlayer.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Metallurgy and Metallography
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE