Transient Phenomena in Electron Transport in Semiconductors.
Final rept. for period ending 31 Jan 79.
CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING
Pagination or Media Count:
Theoretical efforts at understanding the band structure of, and hence electron transport in, alloy semiconductor materials are described. In particular, calculations of band structure and transient and equilibrated velocity-field relationships are being performed for GaxIn1-xAs and GaxIn1-xAsyP1-y, materials which may be suitable for fast logic or microwave devices. Methods for describing pseudopotential variations and chemical disorder in alloys are discussed. Author
- Solid State Physics