Admittance Behavior in GaAs Schottky IMPATT Diodes.
Final rept. 1 Jun 78-31 May 79,
TEXAS A AND M UNIV COLLEGE STATION DEPT OF ELECTRICAL ENGINEERING
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This report presents the results of efforts, all of which are related to ionization rate effects on the admittance behavior of Low-High-Low gallium-arsenide LHL GaAs Schottky IMPATT diodes. The analysis were made using an improved equivalent circuit model which was developed earlier. The effects of reported different ionization rates in GaAs as well as newly generated ones were calculated and compared with experimentally measured admittance data. Generally, good agreement has been obtained. It is observed that i at low currents, the resonant frequency is less that the cutoff frequency and ii at high currents, the admittance behavior is capacitive. The results also indicate the possible existence of injection mechanisms other than impact ionization which become most apparent at high fields and are influenced by crystal orientation.
- Solid State Physics