Accession Number:

ADA071841

Title:

Charge Storage, Retention and Endurance in MNOS Devices

Descriptive Note:

Final rept. 10 Apr 1977-13 Apr 1979

Corporate Author:

UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

• Lehovec, Kurt

Report Date:

1979-06-10

Pagination or Media Count:

25.0

Abstract:

A simple analytical expression is derived for charge retention in MNOS memory devices assuming that retention loss is limited by Frenkel-Poole release from monoenergetic traps. This model shows that charge retention becomes eventually independent of the initial charge distribution. Experimental data obtained at elevated temperatures confirm this model. Charging of MNOS capacitors and memory charge retention were investigated at constant oxide fields using the staircase charging method. The data indicate participation by holes as well as by electrons in charge transport through the dual dielectric at positive gate biases.

Descriptors:

• *MEMORY DEVICES
• *METAL NITRIDE OXIDE SEMICONDUCTORS
• INJECTION
• HOLES(ELECTRON DEFICIENCIES)
• ENDURANCE(GENERAL)
• RETENTION(GENERAL)
• ELECTRIC CHARGE

Subject Categories:

• Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE