Noise Measurements on a P-Surface Channel CCD Mulitplexer.
Interim rept. Mar 78-Mar 79,
NAVAL RESEARCH LAB WASHINGTON DC
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The noise performance of a p-surface channel CCD multiplexer was measured at room temperature and at 160 K. Theoretical calculations were made of the contributions from KTC noise, dark current noise and interface state trapping noise. The calculated values agree well with the experimental results. The design goal for these devices was temporal noise voltage of 15 microvolts 3500 rms noise carriers referenced to the input. Cooled to 160 K we measured a noise voltage of 16 microvolts 3750 rms noise carriers referenced to the input. The spatial or fixed pattern noise was much larger 12 millivolts 2.9 x 10 to the 6th power rms noise carriers referenced to the input. The noise measured on a device irradiated to 10,000 RadSi under bias was approximately twice the value for an unirradiated device. Author
- Solid State Physics