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Accession Number:
ADA071739
Title:
Calculation of the Free Carrier Density Profile in a Semiconductor near an OHMIC Contact,
Descriptive Note:
Corporate Author:
CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING
Report Date:
1979-06-22
Pagination or Media Count:
7.0
Abstract:
In this note, a quantitative attempt is made to answer the question To what depth does the equilibrium free carrier density penetrate into a low doped semiconductor from a heavily doped region interfacing it. The simple answer A few Debye lengths can sometimes prove to be inadequate.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE