Accession Number:

ADA071739

Title:

Calculation of the Free Carrier Density Profile in a Semiconductor near an OHMIC Contact,

Descriptive Note:

Corporate Author:

CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s):

• Chandra,Amitabh

Report Date:

1979-06-22

Pagination or Media Count:

7.0

Abstract:

In this note, a quantitative attempt is made to answer the question To what depth does the equilibrium free carrier density penetrate into a low doped semiconductor from a heavily doped region interfacing it. The simple answer A few Debye lengths can sometimes prove to be inadequate.

Descriptors:

• *CHARGE CARRIERS
• *SEMICONDUCTORS
• *ELECTRIC CONTACTS
• MATHEMATICAL MODELS
• INTERFACES
• PENETRATION
• DOPING
• POISSON EQUATION

Subject Categories:

• Numerical Mathematics
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE