Accession Number:

ADA071738

Title:

Growth and Characterization of High Purity Lattice Matched GaInAs on InP,

Descriptive Note:

Corporate Author:

CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s):

• Oliver,James D.
• Eastman,Lester F.

Report Date:

1979-06-22

Pagination or Media Count:

2.0

Abstract:

The high mobility of GaInAs allows its potential use as a field effect transistor active layer in either microwave, or high speed logic applications, provided that doping levels can be adequately controlled. Previous studies have identified silicon as the major residual donor in InP2 and GaAs. Here we report on the highest purity GaInAs produced, by carefully controlling the incorporation of silicon.

Descriptors:

• *GALLIUM ARSENIDES
• *FIELD EFFECT TRANSISTORS
• *DOPING
• *INDIUM PHOSPHIDES
• MANUFACTURING
• EPITAXIAL GROWTH
• IMPURITIES
• SILICON
• SEMICONDUCTING FILMS
• INDIUM

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE