Accession Number:
ADA071737
Title:
The Liquid Phase Epitaxial Growth of High Purity, Ga(1-x)Al(x)As,
Descriptive Note:
Corporate Author:
CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING
Personal Author(s):
Report Date:
1979-06-22
Pagination or Media Count:
27.0
Abstract:
We report the high purity in the LPE growth of n Ga1-xAlxAs O x or .3 at 700 - 675 C. Carrier concentrations at or below 10 to the 15th powercc have been consistently obtained, the lowest value achieved being under 3 x 10 to the 14th powercc at x .15. It has been shown that these low carrier concentrations do not result from a high compensation ratio. We believe that a dominant shallow donor impurity thought to be sulphur is introduced into the melt with the aluminum. We find that the second epigrowth from a melt is significantly purer than the first, presumably due to the extra baking.
Descriptors:
Subject Categories:
- Solid State Physics