Accession Number:

ADA071737

Title:

The Liquid Phase Epitaxial Growth of High Purity, Ga(1-x)Al(x)As,

Descriptive Note:

Corporate Author:

CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1979-06-22

Pagination or Media Count:

27.0

Abstract:

We report the high purity in the LPE growth of n Ga1-xAlxAs O x or .3 at 700 - 675 C. Carrier concentrations at or below 10 to the 15th powercc have been consistently obtained, the lowest value achieved being under 3 x 10 to the 14th powercc at x .15. It has been shown that these low carrier concentrations do not result from a high compensation ratio. We believe that a dominant shallow donor impurity thought to be sulphur is introduced into the melt with the aluminum. We find that the second epigrowth from a melt is significantly purer than the first, presumably due to the extra baking.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE