Accession Number:
ADA071736
Title:
A Method to Overcome the Problem of Series Resistance in the Capacitance-Voltage Technique for Carrier Density Determination,
Descriptive Note:
Corporate Author:
CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING
Personal Author(s):
Report Date:
1979-06-22
Pagination or Media Count:
8.0
Abstract:
The net donor density of n type GaAs epitaxial layers is commonly determined from capacitance - voltage measurements made on a Schottky barrier deposited on the epitaxial layer. The back ohmic contact is usually alloyed to the substrate, if it is n type, or to the layer itself, if the substrate is semiinsulating. In the latter case, the resistance R in series with the Schottky diode capacitance C can be significant and can introduce an error in the determination of C. In this note, a practical solution to the problem is proposed.
Descriptors:
Subject Categories:
- Test Facilities, Equipment and Methods
- Solid State Physics