Accession Number:

ADA071735

Title:

A Study of Alloy Scattering in Ga1-xAlxAs,

Descriptive Note:

Corporate Author:

CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s):

• Chandra,Amitabh
• Eastman,Lester F.

Report Date:

1979-06-22

Pagination or Media Count:

31.0

Abstract:

The temperature dependence of electron mobility of high purity n 10 to the 15th powercc LPE Ga1-xAlxAs layers x .18 has been studied in the range 25 deg K - 110 deg K to measure the extents of alloy-like and ionized impurity scattering. Values of the alloy scattering parameter Delta E which may include a contribution from space charge scattering determined for these samples were found to lie in the range .36 eV to .51 eV, the average being .44 eV. The compensation ratio was found to be about 2, and independent of x. Author

Descriptors:

• *GALLIUM ARSENIDES
• *ALUMINUM ARSENIDES
• *ELECTRON MOBILITY
• SCATTERING
• EPITAXIAL GROWTH
• SEMICONDUCTORS
• IMPURITIES
• PURITY
• LIQUID PHASES

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE