Accession Number:

ADA071734

Title:

Surface and Interface Depletion Corrections to Free Carrier Density Determinations by Hall Measurements,

Descriptive Note:

Corporate Author:

CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING

Report Date:

1979-06-22

Pagination or Media Count:

23.0

Abstract:

Errors in the determination of ND-NA for semiconductor epitaxial layers by the Hall method can result if corrections for carrier depletion are omitted in the calculations. Simple practical procedures are discussed to correct for carrier depletion that occurs in epitaxial layers at their free surfaces, and their interfaces with semi-insulating substrates. Theoretical estimates of carrier depletion in GaAs indicate that depletion regions can extend several microns into high purity epitaxial layers, and can cause ND-NA to be considerably underestimated. Experimental evidence is presented in support of the theory. Author

Subject Categories:

  • Electricity and Magnetism
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE