Accession Number:

ADA071733

Title:

Rectification at nGaAs - n Ga.7Al.3As Heterojunctions Grown by L.P.E.,

Descriptive Note:

Corporate Author:

CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1979-06-22

Pagination or Media Count:

20.0

Abstract:

Heterojunctions between n-type GaAs, and high purity n-type Ga.7Al.3As have been grown by LPE at 700 C, and significant current rectification has been observed across them at room temperature. At low temperatures, the current drops and the degree of rectification increases considerably. The reverse current characteristic shows reasonable semi-quantitative agreement with theoretical I-V curves, calculated by using a thermionic emission model. The N-W profile measured across the interface indicates qualitatively the presence of a dipolar space-charge region, as expected.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE