Accession Number:

ADA071732

Title:

Rectification at n-n GaAs: (Ga, Al)As Heterojunctions,

Descriptive Note:

Corporate Author:

CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s):

• Chandra,Amitabh
• Eastman,Lester F.

Report Date:

1979-06-22

Pagination or Media Count:

12.0

Abstract:

N-N Ga .7Al.3As GaAs heterojunction structures have been grown by LPE, with 10 to the 15th power per cu cm net carriers in the ternary. N-W profiling across the heterojunction shows an accumulation region on the GaAs side and a depletion region on the Ga,AlAs Side. I-V characteristics at room temperature show significant rectification. Author

Descriptors:

• *HETEROJUNCTIONS
• *SEMICONDUCTOR JUNCTIONS
• *N TYPE SEMICONDUCTORS
• *RECTIFIERS
• GALLIUM ARSENIDES
• ALUMINUM GALLIUM ARSENIDES
• DOPING

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE