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Accession Number:
ADA071732
Title:
Rectification at n-n GaAs: (Ga, Al)As Heterojunctions,
Descriptive Note:
Corporate Author:
CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING
Report Date:
1979-06-22
Pagination or Media Count:
12.0
Abstract:
N-N Ga .7Al.3As GaAs heterojunction structures have been grown by LPE, with 10 to the 15th power per cu cm net carriers in the ternary. N-W profiling across the heterojunction shows an accumulation region on the GaAs side and a depletion region on the Ga,AlAs Side. I-V characteristics at room temperature show significant rectification. Author
Distribution Statement:
APPROVED FOR PUBLIC RELEASE