Accession Number:
ADA071516
Title:
EPR Studies on Quenched-In-Defects in Silicon,
Descriptive Note:
Corporate Author:
STATE UNIV OF NEW YORK AT ALBANY DEPT OF PHYSICS
Personal Author(s):
Report Date:
1979-01-01
Pagination or Media Count:
8.0
Abstract:
Descriptors:
- *HOLES(ELECTRON DEFICIENCIES)
- *SILICON
- ANNEALING
- CHROMIUM
- CRYSTAL DEFECTS
- CRYSTAL GROWTH
- DOPING
- ELECTRICAL CONDUCTIVITY
- ELECTRON PARAMAGNETIC RESONANCE
- ENTHALPY
- HEAT TREATMENT
- HIGH TEMPERATURE
- IMPURITIES
- INTERSTITIAL
- IRON
- MEASUREMENT
- PARAMAGNETIC MATERIALS
- QUENCHING
- REPRINTS
- SPECTRA
- SPECTRUM ANALYSIS
- THERMAL PROPERTIES
Subject Categories:
- Crystallography
- Solid State Physics