Accession Number:

ADA071447

Title:

Electronic Characteristics of III-V Compounds.

Descriptive Note:

Final technical rept. 1 Jan 77-30 Sep 78,

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF MATERIALS SCIENCE AND ENGINEERING

Personal Author(s):

Report Date:

1979-05-01

Pagination or Media Count:

76.0

Abstract:

Our experimental and theoretical program has been aimed at the development of approaches and methods for the reliable electronic characterization of III-V compounds. We have investigated the determination of compositional, structural and electronic characteristics of GaAs and InP on a macro- and micro-scale. We have developed novel theoretical and experimental techniques for obtaining two-dimensional microprofiles of the carrier concentration in GaAs and InP scanning IR absorption and microprofiles of the minority carrrier characteristics SEM-EBIC mode. We have also developed convenient methods for the determination of the compensation ratio and total concentration of ionized impurities which is based on electron mobility and free carrier absorption. Finally, we have initiated a comprehensive characterization study of InP in conjunction with crystal growth. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE