Electronic Characteristics of III-V Compounds.
Final technical rept. 1 Jan 77-30 Sep 78,
MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF MATERIALS SCIENCE AND ENGINEERING
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Our experimental and theoretical program has been aimed at the development of approaches and methods for the reliable electronic characterization of III-V compounds. We have investigated the determination of compositional, structural and electronic characteristics of GaAs and InP on a macro- and micro-scale. We have developed novel theoretical and experimental techniques for obtaining two-dimensional microprofiles of the carrier concentration in GaAs and InP scanning IR absorption and microprofiles of the minority carrrier characteristics SEM-EBIC mode. We have also developed convenient methods for the determination of the compensation ratio and total concentration of ionized impurities which is based on electron mobility and free carrier absorption. Finally, we have initiated a comprehensive characterization study of InP in conjunction with crystal growth. Author
- Solid State Physics