Accession Number:

ADA071396

Title:

Submicron FETs using Molecular Beam Epitaxy.

Descriptive Note:

Annual rept. no. 1 Aug 77-Aug 78,

Corporate Author:

VARIAN ASSOCIATES PALO ALTO CA SOLID STATE LAB

Personal Author(s):

• Bandy,S.
• Collins,D.
• Nishimoto,C.

Report Date:

1979-06-25

Pagination or Media Count:

54.0

Abstract:

Electron-beam exposure and MBE material have been used to achieve quarter-micron gate length GaAs FETs. A noise figure of 2.2 dB with an associated gain of 12 dB has been measured at 8 GHz. Author

Descriptors:

• *FIELD EFFECT TRANSISTORS
• *SEMICONDUCTORS
• *MOLECULAR BEAMS
• *ELECTRON BEAMS
• TEST AND EVALUATION
• EXPOSURE(GENERAL)
• LAYERS
• GALLIUM ARSENIDES
• THIN FILMS
• EPITAXIAL GROWTH
• GAIN
• ANODIC COATINGS
• LOW NOISE

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE