Accession Number:

ADA071396

Title:

Submicron FETs using Molecular Beam Epitaxy.

Descriptive Note:

Annual rept. no. 1 Aug 77-Aug 78,

Corporate Author:

VARIAN ASSOCIATES PALO ALTO CA SOLID STATE LAB

Personal Author(s):

Report Date:

1979-06-25

Pagination or Media Count:

54.0

Abstract:

Electron-beam exposure and MBE material have been used to achieve quarter-micron gate length GaAs FETs. A noise figure of 2.2 dB with an associated gain of 12 dB has been measured at 8 GHz. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE