Accession Number:

ADA071166

Title:

Epitaxial Growth of Semi-Insulating GaAs

Descriptive Note:

Interim rept. 1 Jul 1978-31 Mar 1979

Corporate Author:

RCA LABS PRINCETON NJ

Report Date:

1979-05-01

Pagination or Media Count:

59.0

Abstract:

The objectives of this program are to 1 develop techniques for the epitaxial growth of high-resistivity buffer layers on semi-insulating SI GaAs substrates, 2 investigate ion implantation of donors into GaAs over a range of 50 to 2000 keV, and 3 investigate the potential of laser annealing to remove lattice damage caused by ion implantation and to activate the implanted donors. Preliminary results on growth of Cr-doped buffer layers by vapor-phase epitaxy VPE were described in our previous report. These Cr-doped layers were grown using the GaHC1AsH3H2 system. Based on these results specifications for a new semi-automatic gas-handling system were developed and the unit purchased from Crystal Specialties.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE