Epitaxial Growth of Semi-Insulating GaAs
Interim rept. 1 Jul 1978-31 Mar 1979
RCA LABS PRINCETON NJ
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The objectives of this program are to 1 develop techniques for the epitaxial growth of high-resistivity buffer layers on semi-insulating SI GaAs substrates, 2 investigate ion implantation of donors into GaAs over a range of 50 to 2000 keV, and 3 investigate the potential of laser annealing to remove lattice damage caused by ion implantation and to activate the implanted donors. Preliminary results on growth of Cr-doped buffer layers by vapor-phase epitaxy VPE were described in our previous report. These Cr-doped layers were grown using the GaHC1AsH3H2 system. Based on these results specifications for a new semi-automatic gas-handling system were developed and the unit purchased from Crystal Specialties.
- Solid State Physics