Accession Number:

ADA071166

Title:

Epitaxial Growth of Semi-Insulating GaAs

Descriptive Note:

Interim rept. 1 Jul 1978-31 Mar 1979

Corporate Author:

RCA LABS PRINCETON NJ

Personal Author(s):

• Jolly, S. T.
• Douglas, E. C.
• Liu, S. G.
• Wu, C. P.
• Yun, Y. H.

Report Date:

1979-05-01

Pagination or Media Count:

59.0

Abstract:

The objectives of this program are to 1 develop techniques for the epitaxial growth of high-resistivity buffer layers on semi-insulating SI GaAs substrates, 2 investigate ion implantation of donors into GaAs over a range of 50 to 2000 keV, and 3 investigate the potential of laser annealing to remove lattice damage caused by ion implantation and to activate the implanted donors. Preliminary results on growth of Cr-doped buffer layers by vapor-phase epitaxy VPE were described in our previous report. These Cr-doped layers were grown using the GaHC1AsH3H2 system. Based on these results specifications for a new semi-automatic gas-handling system were developed and the unit purchased from Crystal Specialties.

Descriptors:

• *EPITAXIAL GROWTH
• *GALLIUM ARSENIDES
• *INSULATION
• ANNEALING
• CHEMICAL REACTORS
• CHROMIUM
• CRYSTAL DEFECTS
• CRYSTAL GROWTH
• CRYSTAL LATTICES
• DOPING
• EXPERIMENTAL DATA
• ION IMPLANTATION
• LASERS
• LAYERS
• MEASUREMENT
• VAPOR PHASES

Subject Categories:

• Crystallography
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE