Accession Number:

ADA071094

Title:

Minority Carrier Lifetime and Diffusion Length in P-Type Mercury Cadmium Telluride.

Descriptive Note:

Final technical rept. Aug 77-Jan 79,

Corporate Author:

HONEYWELL ELECTRO-OPTICS CENTER LEXINGTON MA

Personal Author(s):

• Schmit,Joseph L.
• Tobin,Stephen P.
• Tredwell,Timothy J.

Report Date:

1979-02-01

Pagination or Media Count:

153.0

Abstract:

This report covers a study of the relationship between minority carrier properties and majority carrier hole and acceptor concentrations. This report documents the following conclusions The dominant recombination mechanism is Shockley-Read not radiative. The recombination center is at 140 meV above the valence band edge and has a concentration proportional to the acceptor concentration.

Descriptors:

• *CHARGE CARRIERS
• *CADMIUM TELLURIDES
• *DIFFUSION
• *MERCURY COMPOUNDS
• *PHOTODIODES
• MEASUREMENT
• ANNEALING
• PREPARATION
• LIFE EXPECTANCY(SERVICE LIFE)
• MATERIALS
• THEORY
• FABRICATION
• RADIATIVE TRANSFER
• HOLES(ELECTRON DEFICIENCIES)
• EPITAXIAL GROWTH
• SEMICONDUCTOR DIODES
• CHARGE DENSITY
• CRYSTAL GROWTH
• MERCURY ALLOYS

Subject Categories:

• Metallurgy and Metallography
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE