The Study and Identification of Residual Donor Species in High Purity Semiconductors.
Final rept. 1 Jun 78-31 May 79,
ILLINOIS UNIV AT URBANA-CHAMPAIGN DEPT OF ELECTRICAL ENGINEERING
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A Fourier transform spectroscopy apparatus has been constructued. This apparatus uses photothermal ionization to probe the energy level structure of shallow impurities in semiconductors. The present form of the apparatus, and progress made in modifying it to increase its resolution are described in detail. An account of our immediate and possible furture applications of the apparatus is given. Author
- Solid State Physics