Accession Number:
ADA070866
Title:
Photoluminescence of Gallium Arsenide Encapsulated with Aluminum and Silicon Nitride Films.
Descriptive Note:
Technical rept.,
Corporate Author:
COLORADO STATE UNIV FORT COLLINS DEPT OF PHYSICS
Personal Author(s):
Report Date:
1979-05-01
Pagination or Media Count:
14.0
Abstract:
Aluminum and silicon nitride films were deposited on lightly doped n-type GaAsSi by low energy ion beam sputtering. The films showed no signs of deterioration when annealed at 900 C, and the GaAs photoluminescence spectra showed new features only at the higher annealing temperatures. Author
Descriptors:
Subject Categories:
- Coatings, Colorants and Finishes
- Solid State Physics