Accession Number:

ADA070866

Title:

Photoluminescence of Gallium Arsenide Encapsulated with Aluminum and Silicon Nitride Films.

Descriptive Note:

Technical rept.,

Corporate Author:

COLORADO STATE UNIV FORT COLLINS DEPT OF PHYSICS

Personal Author(s):

Report Date:

1979-05-01

Pagination or Media Count:

14.0

Abstract:

Aluminum and silicon nitride films were deposited on lightly doped n-type GaAsSi by low energy ion beam sputtering. The films showed no signs of deterioration when annealed at 900 C, and the GaAs photoluminescence spectra showed new features only at the higher annealing temperatures. Author

Subject Categories:

  • Coatings, Colorants and Finishes
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE