Ion Beam Sputtered A10xNy Encapsulating Films.
COLORADO STATE UNIV FORT COLLINS DEPT OF PHYSICS
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The encapsulating properties of 800-1500 A aluminum oxynitride films, deposited on GaAs by low energy ion beam sputtering, were characterized by optical microscopy, electrical conductivity, Auger profiling, and ellipsometry. The better films were found to withstand annealing to above 900 C with minimal physical deterioration. Author
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