Accession Number:

ADA070863

Title:

Ion Beam Sputtered A10xNy Encapsulating Films.

Descriptive Note:

Technical rept.,

Corporate Author:

COLORADO STATE UNIV FORT COLLINS DEPT OF PHYSICS

Personal Author(s):

• Birey,Huelya
• Pak,Sung-Jae
• Sites,J. R.
• Wager,J. F.

Report Date:

1979-04-01

Pagination or Media Count:

22.0

Abstract:

The encapsulating properties of 800-1500 A aluminum oxynitride films, deposited on GaAs by low energy ion beam sputtering, were characterized by optical microscopy, electrical conductivity, Auger profiling, and ellipsometry. The better films were found to withstand annealing to above 900 C with minimal physical deterioration. Author

Descriptors:

• *ALUMINUM COMPOUNDS
• *GALLIUM ARSENIDES
• *ENCAPSULATION
• *OXYNITRIDES
• ANNEALING
• HIGH TEMPERATURE
• ION BEAMS
• IMPURITIES
• ELECTRICAL CONDUCTIVITY
• MICROSCOPY
• DIFFUSION
• ELLIPSOMETERS
• AUGER ELECTRON SPECTROSCOPY
• SPUTTERING

Subject Categories:

• Coatings, Colorants and Finishes
• Manufacturing and Industrial Engineering and Control of Production Systems
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE