Accession Number:

ADA070809

Title:

Depth and Carrier Concentration of Photoluminescence Features in Heat Treated GaAs:Si.

Descriptive Note:

Technical rept.,

Corporate Author:

COLORADO STATE UNIV FORT COLLINS DEPT OF PHYSICS

Personal Author(s):

Report Date:

1979-05-01

Pagination or Media Count:

17.0

Abstract:

The photoluminescence PL spectra of silicon doped n-type GaAs of four different carrier concentrations from 4 x 10 to the 15th power to 3 x 10 to the 18th powercc were examined. Successive measurements as the samples were annealed for times from 15 to 60 minutes at 600-700 C, and as they were successively etched back, revealed that all PL changes were surface related, with a typical depth of 1 micron. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE