Depth and Carrier Concentration of Photoluminescence Features in Heat Treated GaAs:Si.
COLORADO STATE UNIV FORT COLLINS DEPT OF PHYSICS
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The photoluminescence PL spectra of silicon doped n-type GaAs of four different carrier concentrations from 4 x 10 to the 15th power to 3 x 10 to the 18th powercc were examined. Successive measurements as the samples were annealed for times from 15 to 60 minutes at 600-700 C, and as they were successively etched back, revealed that all PL changes were surface related, with a typical depth of 1 micron. Author
- Solid State Physics