Accession Number:

ADA070776

Title:

Advanced Archival Memory

Descriptive Note:

Interim rept. no. 6, 1 Jan-1 Jul 1978

Corporate Author:

GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY NY

Report Date:

1979-03-01

Pagination or Media Count:

155.0

Abstract:

This report covers the effort for the first eight months of 1978. The contract has been redirected from the ion damage writing concept to one based on electron beam milling of thin layers of selenium-arsenic on silicon diode detectors. Background surrounding the redirection can be found in the introduction. Work in the reporting period has concentrated on evaluating two all-electron beam storage concepts alloy junction and electron beam milling. The electron beam milling approach has been chosen, and an advanced high current electron probe is being purchased for use in evaluating this storage concept.

Subject Categories:

  • Fabrication Metallurgy
  • Computer Hardware

Distribution Statement:

APPROVED FOR PUBLIC RELEASE