Exploratory Development on Silicon Material for ladir.
Final rept. 1 Aug 75-30 Sep 77,
ROCKWELL INTERNATIONAL ANAHEIM CALIF
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This report contains a background description of the program, an evaluation of test approaches, test results, and a description of the process which has been developed to produce silicon material which meets the requirements of the contract. Where applicable, these subjects are discussed under the following tasks Task I, Purification of Intrinsic Silicon Task 2, Growth of Doped Silicon Crystals Task 3, Crystal Material Evaluation and Task 4, Definition of Growth Process. A major conclusion of the program is that the most suitable counter dopant for the residual boron concentration is antimony Sb. This impurity has characteristics that are compatible with the other impurities in the material and remains stable during the on-chip microelectronics processing. In addition, it is easy to introduce into the silicon ingot during the doping process and distributes evenly over the bulk.
- Ceramics, Refractories and Glass
- Infrared Detection and Detectors