Manufacturing Methods and Technology Program for Beam Lead Sealed Junction Semiconductor Devices.
Final technical rept. 21 May 75-21 Sep 77,
MOTOROLA INC PHOENIX AZ SEMICONDUCTOR GROUP
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This is the Final Technical Report on Motorolas Beam Lead Device Manufacturing Methods and Technology contract with ECOM. Although the market for beam lead devices unfortunately diminished over the two-year timespan of this program, resulting in later cancelling of some of the requirements, the work was certainly well worth the effort. The technologies initiated and the improvements made in the processing of the devices provided Motorola with the necessary experience which proved beneficial on other military programs. The low power Schottky process was employed and developed on these junction-isolated interated circuits for the first time within the Federal High Reliability Products Operation. Master masking was also initiated for the first time in this Operation and proved to be highly successful in providing very high yields, especially for beam lead devices. As an example, the 54LS197, which is a binary counter, achieved a 40.6 percent probe yield on the first processing lot. Conversely, the results on the discrete devices proved to be a disappointment. All of this is detailed in this final report. Author
- Electrical and Electronic Equipment
- Solid State Physics