Interface Doping of MNOS Transistors.
Final technical rept. 1 Apr 76-31 Mar 77 on Phase 1,
GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY N Y
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This Interim Technical Report describes the progress for the 1 April 1976 to March 1977 period of Phase I of the Interface Doping of MNOS program. Use of Cr, W, Pt, Ni, Pd and Ir as interface dopant in monolayer quantities between an oxide layer of Fowler-Nordheim tunneling thickness and 300-500A of Si3N4 gives MNOS memory retention of electrons of many centuries even at elevated temperatures, while retaining high write speed. Endurance is limited to 1000 writeerase cycles. Author
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