Accession Number:

ADA067857

Title:

Interface Doping of MNOS Transistors.

Descriptive Note:

Final technical rept. 1 Apr 76-31 Mar 77 on Phase 1,

Corporate Author:

GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY N Y

Personal Author(s):

• Neugebauer,C. A.
• Barnicle,M. M.

Report Date:

1977-06-01

Pagination or Media Count:

117.0

Abstract:

This Interim Technical Report describes the progress for the 1 April 1976 to March 1977 period of Phase I of the Interface Doping of MNOS program. Use of Cr, W, Pt, Ni, Pd and Ir as interface dopant in monolayer quantities between an oxide layer of Fowler-Nordheim tunneling thickness and 300-500A of Si3N4 gives MNOS memory retention of electrons of many centuries even at elevated temperatures, while retaining high write speed. Endurance is limited to 1000 writeerase cycles. Author

Descriptors:

• *INTERFACES
• *READ WRITE MEMORIES
• *DOPING
• *TRANSISTORS
• *METAL NITRIDE OXIDE SEMICONDUCTORS
• NITRIDES
• RETENTION(GENERAL)
• PLATINUM
• NICKEL
• CHROMIUM
• DATA RATE
• SILICON COMPOUNDS
• TUNNELING
• TUNGSTEN
• PALLADIUM
• IRIDIUM

Subject Categories:

• Electrical and Electronic Equipment
• Computer Hardware
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE