Accession Number:

ADA067629

Title:

Transient Radiation and Dose-Enhancement Effects in Transistors.

Descriptive Note:

Interim rept.,

Corporate Author:

AEROSPACE CORP EL SEGUNDO CALIF IVAN A GETTING LABS

Personal Author(s):

• Molen,G. Marshall
• Bernstein,Melvin J.
• Paschen,Kenneth W.
• Vandre,Robert H.

Report Date:

1978-08-22

Pagination or Media Count:

36.0

Abstract:

The response of bipolar transistors to ionizing radiation is considered for a relatively soft x-ray spectrum. A plasma-focus device was used to irradiate several silicon transistors under controlled conditions so that the relative contributions to the radiation response could be isolated. The photocurrent response resulting from direct photon interaction with the silicon chip was in excellent agreement with computations made on the basis of device geometry however, contributions from packaging effects were found to be less predictable. The high Z package resulted in a nonuniform dose deposition in the device. The resultant dose enhancement is compared with integrated depth-dose profiles calculated with a Monte Carlo electron transport code. Author

Descriptors:

• *TRANSISTORS
• *TRANSIENT RADIATION EFFECTS
• COMPUTERIZED SIMULATION
• ELECTRON TRANSPORT
• CHIPS(ELECTRONICS)
• MONTE CARLO METHOD
• X RAYS
• PULSE RATE
• GAIN
• DOPING
• IONIZING RADIATION
• RADIATION DOSAGE
• BIPOLAR TRANSISTORS
• PHOTOELECTRIC EFFECT

Subject Categories:

• Electrical and Electronic Equipment
• Nuclear Radiation Shielding, Protection and Safety
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE